npn 2N1613 ? 2n1711 comset semiconductors 1/3 the 2N1613 and 2n1711 are npn transistors mounted in to-39 metal package with the collector connected to the case . they are designed for use in high-performance amplifier, oscillator and switching circuits. the 2n1711 is also used to advantage in amplif iers where low noise is an important factor. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage 75 v v cer collector-emitter voltage (r be = 10 ? ) 50 v v ebo emitter-base voltage 7 v i c collector current 5 ma i cm peak collector current 1 a i bm peak base current 200 ma p d total power dissipation @ t case = 25 3 w @ t case = 100 1.7 w @ t amb = 25 0.8 w t j junction temperature 200 c t stg storage temperature range -65 to +150 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction-case 58 c/ w r thj-amb thermal resistance, junction-ambient 219 c/ w s s i i l l i i c c o o n n p p l l a a n n a a r r e e p p i i t t a a x x i i a a l l t t r r a a n n s s i i s s t t o o r r s s www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2N1613 ? 2n1711 24/09/2012 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v ce =60 v, i e =0 - - 10 na v ce =60 v, i e =0 t amb = 150c - - 10 a i eb0 emitter cutoff current v eb =5 v 2N1613 - - 10 na v eb =5 v 2n1711 - - 5 v cbo collector base breakdown voltage i c =0.1 ma 75 - - v v ebo emitter base breakdown voltage i e =100 a , i c =0 7 - - v v ce(sat) (*) collector-emitter saturation voltage i c =150 ma , i b =15 ma - - 1.5 v v be(sat) (*) base-emitter saturation voltage i c =150 ma, i b =15 ma - - 1.3 v h fe (*) dc current gain i c =0.1 ma, v ce =10 v 2N1613 20 - - - i c =10 ma, v ce =10 v 35 - - i c =150 ma, v ce =10 v 40 - 120 i c =500 ma, v ce =10 v 20 - - i c =10 a, v ce =10 v 2n1711 20 - - i c =0.1 ma, v ce =10 v 35 - - i c =10 ma, v ce =10 v 75 - - i c =150 ma, v ce =10 v 100 - 300 i c =500 ma, v ce =10 v 40 - - symbol ratings test condition(s) min typ mx unit f t transition frequency i c =50 ma, v ce =10 v, f= 100mhz 2N1613 60 - - mhz 2n1711 70 - - c cbo collector-base capacitance i e = 0, v cb = 10 v, f = 1mhz - - 25 pf c ebo emitter-base capacitance i c = 0, v eb = 0.5v, f = 1mhz - - 80 pf nf noise figure i c = 0.3 ma, v ce = 10 v f = 1 khz, r 9 = 510 ? 2N1613 - - 12 db i c = 0.3 ma, v ce = 10 v f = 1 khz, r 9 = 510 ? 2n1711 - - 8 (*) pulse conditions : tp < 300 s, =2%. www.datasheet.net/ datasheet pdf - http://www..co.kr/
npn 2N1613 ? 2n1711 24/09/2012 comset semiconductors 3/3 mechanical data case to-39 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 8.50 9.39 b 7.74 8.50 c 6.09 6.60 d 0.40 0.53 e - 0.88 f 2.41 2.66 g 4.82 5.33 h 0.71 0.86 j 0.73 1.02 k 12.70 - l 42 48 pin 1 : emitter pin 2 : base pin 3 : collector case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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